r07ds0822ej0002 rev.0.02 page 1 of 3 aug 09, 2012 preliminary datasheet rjp65s05dwt/rjp65s05dwa 650v - 75a - igbt application: inverter features ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ. (at i c = 75 a, v ge = 15 v, ta = 25 ? c) ? high speed switching ? short circuit withstands time (10 ? s min.) outline 1. gate 2. collector (the back) 3. emitter die: rjp65s05dwt-80 wafer: rjp65s05dwa-80 2 c 2 1 g e 3 1 3 3 3 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage v ces 650 v gate to emitter voltage v ges 30 v tc = 25c i c note1 150 a collector current tc = 100c i c note1 75 a junction temperature tj 150 ? c notes: 1. this data is a regul ated value in evaluation package. r07ds0822ej0002 rev.0.02 aug 09, 2012
rjp65s05dwt/rjp65s05dwa preliminary r07ds0822ej0002 rev.0.02 page 2 of 3 aug 09, 2012 electrical characteristics (these data are an actual measur ement value in evaluation package.) (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 1 ? a v ce = 650 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 5.0 ? 6.8 v v ce = 10 v, i c = 1.5ma collector to emitter saturation voltage v ce(sat) ? 1.60 1.95 v i c = 75 a, v ge = 15 v note2 input capacitance cies ? 6.6 ? nf output capacitance coes ? 0.28 ? nf reveres transfer capacitance cres ? 0.22 ? nf v ce = 25 v v ge = 0 f = 1 mhz t d(on) ? 50 ? ns t r ? 50 ? ns t d(off) ? 270 ? ns switching time t f ? 80 ? ns v cc = 300 v note3 i c = 75 a v ge =15 v rg = 10 ? , tj = 125 ? c inductive load short circuit withstand time t sc 10 ? ? ? s v cc ? 360 v , v ge = 15 v tj = 150 ? c notes: 2. pulse test. 3. switching time test circuit and waveform are shown below. switching time test circuit waveform diode clamp d.u.t rg l v cc t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c
rjp65s05dwt/rjp65s05dwa preliminary r07ds0822ej0002 rev.0.02 page 3 of 3 aug 09, 2012 die dimension illustration part of white part of dotted line part of gray note 1. note 2. the back of the chip is processed with au evaporation. note 3. recognition, target and any other patterns which are not related to igbt operation, may be changed without notice. definition al pattern bonding area final passivation 7.0 5.66 1.31 4.29 1.59 0.81 7.0 1.59 1.59 emitter bonding pad (1) emitter bonding pad (3) emitter bonding pad (2) gate bonding pad unit: mm ordering information orderable part number rjp65s05dwa-80#w0 rjp65s05dwt-80#x0
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